参数项参数值
参数项参数值
Gain Bandwidth Product fT175 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current2 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Width2.41 mm
Collector-Emitter Saturation Voltage0.23 V
Height4.01 mm
MXHTS85412101
KRHTS8541299000
Mounting StyleThrough Hole
Package / CaseTO-92-3
JPHTS8541210101
CAHTS8541210000
PackagingAmmo Pack
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541290000
Factory Pack Quantity2000
BrandDiodes Incorporated
SeriesZTX651
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT NPN Super E-Line
ManufacturerDiodes Incorporated
TARIC8541210000
ImageDiodes Incorporated ZTX651STZ
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.016000 oz
SubcategoryTransistors
Pd - Power Dissipation1 W
USHTS8541290075
Moisture Sensitivity Level1 (Unlimited)