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商品参数
参数项参数值
参数项参数值
Gain Bandwidth Product fT175 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current2 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Width2.41 mm
Collector-Emitter Saturation Voltage0.23 V
Height4.01 mm
MXHTS85412101
KRHTS8541219000
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 55 C
Mounting StyleThrough Hole
Package / CaseTO-92-3
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageDiodes Incorporated ZTX651
TARIC8541210000
PackagingBulk
RoHS Details
SeriesZTX651
SubcategoryTransistors
Factory Pack Quantity4000
Product CategoryBipolar Transistors - BJT
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
Unit Weight0.016000 oz
DescriptionBipolar Transistors - BJT NPN Super E-Line
ManufacturerDiodes Incorporated
USHTS8541210095
Pd - Power Dissipation1 W
Moisture Sensitivity Level1 (Unlimited)