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SCT2750NYTB
厂牌：ROHM
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000040380829
描述：Trans MOSFET N-CH SiC 1.7KV 5.9A 3-Pin(2+Tab) TO-268L T/R
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
KRHTS8541299000
Forward Transconductance - Min600 ms
JPHTS8541290100
CAHTS8541290000
Vgs th - Gate-Source Threshold Voltage1.6 V
TechnologySiC
ImageROHM Semiconductor SCT2750NYTB
Transistor PolarityN-Channel
Id - Continuous Drain Current6 A
DescriptionMOSFET N-Ch 1700V 6A 57W SiC Silicon Carbide
Minimum Operating Temperature- 55 C
Vgs - Gate-Source Voltage- 6 V, + 22 V
Typical Turn-On Delay Time19 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
Rds On - Drain-Source Resistance750 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time41 ns
Package / CaseTO-268-3
Product CategoryMOSFET
Maximum Operating Temperature+ 175 C
Factory Pack Quantity800
Mounting StyleSMD/SMT
Product TypeMOSFET
BrandROHM Semiconductor
MXHTS85412999
ManufacturerROHM Semiconductor
RoHS Details
TARIC8541290000
Qg - Gate Charge17 nC
SeriesSCT2x
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time63 ns
Unit Weight0.141096 oz
CNHTS8541290000
Part # AliasesSCT2750NY
Pd - Power Dissipation57 W
Vds - Drain-Source Breakdown Voltage1700 V
Number of Channels1 Channel
Rise Time24 ns
Moisture Sensitivity Level1 (Unlimited)