参数项参数值
参数项参数值
DC Current Gain hFE Max250
Collector- Base Voltage VCBO180 V
Maximum DC Collector Current600 mA
Collector- Emitter Voltage VCEO Max160 V
Continuous Collector Current600 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage0.25 V
DC Collector/Base Gain hfe Min20
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
Unit Weight0.001376 oz
Pd - Power Dissipation300 mW
SeriesMMBT5551L
ImageON Semiconductor SMMBT5551LT3G
BrandON Semiconductor
Factory Pack Quantity10000
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerON Semiconductor
Product CategoryBipolar Transistors - BJT
USHTS8541210095
DescriptionBipolar Transistors - BJT High Voltage NPN Bipolar Transistor
Moisture Sensitivity Level1 (Unlimited)