STB10N95K5

厂牌:STMicroelectronics
包装:Cut Tape (CT) 1
类目:元器件 > 分立器件 > MOSFET
编号:B000040381944
描述:STMICROELECTRONICS - STB10N95K5 - Power MOSFET, N Channel, 950 V, 8 A, 0.65 ohm, TO-263 (D2PAK), Surface Mount 库存分布: SG: 0 UK: 67; packSize: 1; minimumOrderQty: 1; rohs: YES
最新价格近期成交50单+
数量价格(含税)
1¥35.3702
10¥23.8684
100¥17.1215
500¥15.3282
库存:1,000货期:4-7Days起订:1增量:1
数量:
X
35.3702(单价)
合计:
¥35.37
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time22 ns
Rds On - Drain-Source Resistance800 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time51 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge22 nC
Package / CaseTO-263-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
CNHTS8541290000
BrandSTMicroelectronics
SeriesSTB10N95K5
ManufacturerSTMicroelectronics
Factory Pack Quantity1000
TARIC8541290000
Channel ModeEnhancement
Product CategoryMOSFET
RoHS Details
Product TypeMOSFET
DescriptionMOSFET PTD HIGH VOLTAGE
Fall Time15 ns
ImageSTMicroelectronics STB10N95K5
SubcategoryMOSFETs
Unit Weight0.139332 oz
USHTS8541290095
Pd - Power Dissipation130 W
TradenameSuperMESH
Vds - Drain-Source Breakdown Voltage950 V
Number of Channels1 Channel
Rise Time14 ns
Moisture Sensitivity Level1 (Unlimited)