参数项参数值
参数项参数值
DC Current Gain hFE Max200
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO- 160 V
Collector- Emitter Voltage VCEO Max- 150 V
Continuous Collector Current- 500 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 0.5 V
DC Collector/Base Gain hfe Min40
MXHTS85412101
KRHTS8541219000
Mounting StyleSMD/SMT
Package / CaseSC-70-3
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541210000
RoHS Details
ImageON Semiconductor NSVMMBT5401WT1G
PackagingMouseReel
PackagingReel
PackagingCut Tape
SubcategoryTransistors
BrandON Semiconductor
ManufacturerON Semiconductor
SeriesMMBT5401W
Unit Weight0.000212 oz
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity3000
USHTS8541210095
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT PNP HIGH VOLTAGE TRA
Pd - Power Dissipation400 mW
Moisture Sensitivity Level1 (Unlimited)