参数项参数值
参数项参数值
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO- 160 V
Collector- Emitter Voltage VCEO Max- 150 V
Continuous Collector Current- 600 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
MXHTS85412101
QualificationAEC-Q101
KRHTS8541219000
Collector-Emitter Saturation Voltage- 200 mV
DC Collector/Base Gain hfe Min60 at - 10 mA, - 5 V
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
CNHTS8541210000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
ImageDiodes Incorporated MMBT5401Q-7-F
Factory Pack Quantity3000
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
TARIC8541210000
RoHS Details
SeriesMMBT5401
DescriptionBipolar Transistors - BJT SS Hi Voltage Trans
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SubcategoryTransistors
Unit Weight0.000282 oz
USHTS8541210095
Pd - Power Dissipation310 mW
Moisture Sensitivity Level1 (Unlimited)