参数项参数值
参数项参数值
DC Current Gain hFE Max240 at - 10 mA, - 5 VDC
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO- 160 V
Maximum DC Collector Current- 500 mA
Collector- Emitter Voltage VCEO Max- 150 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 200 mV
DC Collector/Base Gain hfe Min60 at - 10 mA, - 5 VDC
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541210000
PackagingMouseReel
PackagingReel
PackagingCut Tape
Unit Weight0.000176 oz
TARIC8541290000
ImageON Semiconductor MMBT5401WT1G
Pd - Power Dissipation400 mW
RoHS Details
SeriesMMBT5401W
Factory Pack Quantity3000
BrandON Semiconductor
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT PNP HIGH VOLTAGE TRANSISTOR
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)