FCP36N60N

FCP36N60N

厂牌：onsemi

包装：Tube 1

类目：元器件 > 分立器件 > MOSFET

编号：B000040401023

描述：MOSFET N-CH 600V 36A TO-220-3

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min41 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage4 V

TechnologySi

Id - Continuous Drain Current36 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 30 V, + 30 V

Typical Turn-On Delay Time23 ns

Rds On - Drain-Source Resistance90 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time94 ns

Width4.7 mm

Height16.3 mm

Length10.67 mm

MXHTS85412999

Qg - Gate Charge86 nC

KRHTS8541299000

Package / CaseTO-220-3

Mounting StyleThrough Hole

Maximum Operating Temperature+ 150 C

JPHTS8541290100

Minimum Operating Temperature- 55 C

CNHTS8541290000

CAHTS8541290000

Channel ModeEnhancement

Fall Time4 ns

PackagingTube

TARIC8541290000

Unit Weight0.085398 oz

BrandON Semiconductor / Fairchild

RoHS Details

SeriesFCP36N60N

Factory Pack Quantity1000

ImageON Semiconductor / Fairchild FCP36N60N

Pd - Power Dissipation312 W

Product CategoryMOSFET

ManufacturerON Semiconductor

SubcategoryMOSFETs

Product TypeMOSFET

USHTS8541290095

Vds - Drain-Source Breakdown Voltage600 V

DescriptionMOSFET 600V NChannel MOSFET SupreMOS

TradenameSupreMOS

Number of Channels1 Channel

Rise Time22 ns

Moisture Sensitivity LevelNot Applicable