参数项参数值
参数项参数值
DC Current Gain hFE Max250
Gain Bandwidth Product fT50 MHz
Collector- Base Voltage VCBO- 100 V
Maximum DC Collector Current1.5 A
Collector- Emitter Voltage VCEO Max- 80 V
Continuous Collector Current1.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 0.5 V
MXHTS85412101
KRHTS8541299000
CNHTS8541290000
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
ImageON Semiconductor SBCP53-16T1G
RoHS Details
SeriesBCP53
ManufacturerON Semiconductor
Unit Weight0.003951 oz
Factory Pack Quantity1000
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT SS GP XSTR PNP 80V
SubcategoryTransistors
Pd - Power Dissipation1.5 W
USHTS8541290075
Moisture Sensitivity Level1 (Unlimited)