参数项参数值
参数项参数值
DC Current Gain hFE Max80
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current0.1 A
ConfigurationSingle
Transistor PolarityNPN
DC Collector/Base Gain hfe Min80
Width1.3 mm
Height0.94 mm
Length2.9 mm
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.000282 oz
ImageON Semiconductor MMUN2213LT1G
Pd - Power Dissipation246 mW
RoHS Details
Factory Pack Quantity3000
Typical Resistor Ratio1
SeriesMMUN2213L
Typical Input Resistor47 kOhms
ManufacturerON Semiconductor
BrandON Semiconductor
Product CategoryBipolar Transistors - Pre-Biased
Product TypeBJTs - Bipolar Transistors - Pre-Biased
SubcategoryTransistors
DescriptionBipolar Transistors - Pre-Biased 100mA 50V BRT NPN
Moisture Sensitivity Level1 (Unlimited)