IRFH8311TRPBF

厂牌:Infineon Technologies
包装:Tape & Reel (TR) 1
类目:元器件 > 分立器件 > MOSFET
编号:B000040443858
描述:INFINEON - IRFH8311TRPBF - Power MOSFET, N Channel, 30 V, 80 A, 0.0017 ohm, PQFN, Surface Mount 库存分布: SG: 0 UK: 3795; packSize: 1; minimumOrderQty: 1; rohs: YES
最新价格近期成交41单+
数量价格(含税)
4000¥3.1089
库存:40,000货期:4-7Days起订:4000增量:4000
数量:
X
3.1089(单价)
合计:
¥12435.60
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.35 V
TechnologySi
Id - Continuous Drain Current80 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time21 ns
Rds On - Drain-Source Resistance2.1 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time21 ns
MXHTS85412999
Width5 mm
Height0.83 mm
Length6 mm
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge30 nC
Package / CasePQFN-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time12 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
BrandInfineon / IR
RoHS Details
ImageInfineon / IR IRFH8311TRPBF
Product CategoryMOSFET
Factory Pack Quantity4000
SubcategoryMOSFETs
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation3.6 W
USHTS8541290095
DescriptionMOSFET MOSFET, 30V, 50A, 2 33nC Qg, PQFN5x6
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time26 ns
TypeHEXFET Power MOSFET
Moisture Sensitivity Level1 (Unlimited)