参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.35 V
TechnologySi
Id - Continuous Drain Current80 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time21 ns
Rds On - Drain-Source Resistance2.1 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time21 ns
MXHTS85412999
Width5 mm
Height0.83 mm
Length6 mm
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge30 nC
Package / CasePQFN-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time12 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
BrandInfineon / IR
RoHS Details
ImageInfineon / IR IRFH8311TRPBF
Product CategoryMOSFET
Factory Pack Quantity4000
SubcategoryMOSFETs
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation3.6 W
USHTS8541290095
DescriptionMOSFET MOSFET, 30V, 50A, 2 33nC Qg, PQFN5x6
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time26 ns
TypeHEXFET Power MOSFET
Moisture Sensitivity Level1 (Unlimited)