参数项参数值
参数项参数值
Forward Transconductance - Min80 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.1 V
TechnologySi
Id - Continuous Drain Current115 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time20 ns
Rds On - Drain-Source Resistance7.5 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
Qg - Gate Charge592 pC
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
PackagingReel
ImageCentral Semiconductor 2N7002 TR TIN/LEAD
TARIC8541290000
RoHSN
Factory Pack Quantity3000
Series2N7002
ManufacturerCentral Semiconductor
BrandCentral Semiconductor
DescriptionMOSFET N-Ch 60Vds 60Vdg 40Vgs 350mW
Product TypeMOSFET
Product CategoryMOSFET
Pd - Power Dissipation350 mW
SubcategoryMOSFETs
USHTS8541210095
Number of Channels1 Channel