参数项参数值
参数项参数值
DC Current Gain hFE Max450
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current100 mA
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage905 mV
DC Collector/Base Gain hfe Min200
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageDiodes Incorporated BCM847BS-7
TARIC8541210000
Factory Pack Quantity3000
ManufacturerDiodes Incorporated
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT General Purpose Transistor
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation200 mW
SubcategoryTransistors
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)