参数项参数值
参数项参数值
Forward Transconductance - Min70 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.2 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time13 ns
Rds On - Drain-Source Resistance2.1 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time44 ns
Qg - Gate Charge117 nC
Package / CaseTSON-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time20 ns
CNHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
Unit Weight0.004375 oz
TARIC8541290000
RoHS Details
Pd - Power Dissipation214 W
ImageInfineon Technologies BSC021N08NS5ATMA1
Part # AliasesBSC021N08NS5 SP001793410
SeriesBSC021N
Factory Pack Quantity5000
BrandInfineon Technologies
ManufacturerInfineon
Vds - Drain-Source Breakdown Voltage80 V
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
Number of Channels1 Channel
TradenameOptiMOS 5
Rise Time17 ns
DescriptionMOSFET TRENCH 40<-<100V
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)