参数项参数值
参数项参数值
Forward Transconductance - Min17 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current30 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time14 ns
Rds On - Drain-Source Resistance75 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time41 ns
Width5.31 mm
Height20.7 mm
Length15.87 mm
Qg - Gate Charge82 nC
Package / CaseTO-247-3
Mounting StyleThrough Hole
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
Fall Time33 ns
PackagingTube
ImageInfineon Technologies IRFP250NPBF
RoHS Details
Unit Weight0.197534 oz
Factory Pack Quantity400
Product TypeMOSFET
Pd - Power Dissipation214 W
BrandInfineon Technologies
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET MOSFT 200V 30A 75mOhm 82nCAC
ManufacturerInfineon
Vds - Drain-Source Breakdown Voltage200 V
Number of Channels1 Channel
Rise Time43 ns
Moisture Sensitivity Level1 (Unlimited)