参数项参数值
参数项参数值
Gain Bandwidth Product fT30 MHz
Collector- Base Voltage VCBO350 V
Maximum DC Collector Current4 A
Collector- Emitter Voltage VCEO Max350 V
Continuous Collector Current4 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
MXHTS85412999
Length10.53 mm
Width4.83 mm
Height15.75 mm
KRHTS8541299000
Collector-Emitter Saturation Voltage0.5 V
Minimum Operating Temperature- 65 C
JPHTS8541290100
Package / CaseTO-220-3
CAHTS8541290000
CNHTS8541290000
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Factory Pack Quantity50
PackagingTube
ImageON Semiconductor MJE15034G
Product CategoryBipolar Transistors - BJT
BrandON Semiconductor
RoHS Details
TARIC8541290000
DescriptionBipolar Transistors - BJT 4A 350V 50W NPN
SeriesMJE15034
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
SubcategoryTransistors
Unit Weight0.211644 oz
USHTS8541290075
Pd - Power Dissipation50 W
Moisture Sensitivity LevelNot Applicable