参数项参数值
参数项参数值
Forward Transconductance - Min110 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.3 V
TechnologySi
Id - Continuous Drain Current40 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time5 ns
Rds On - Drain-Source Resistance2.4 MOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time18 ns
Qg - Gate Charge31 nC
Package / CaseTSDSON-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
BrandInfineon Technologies
PackagingReel
PackagingCut Tape
CNHTS8541290000
ManufacturerInfineon
Product CategoryMOSFET
Product TypeMOSFET
SeriesBSZ0xx
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity5000
Fall Time4 ns
ImageInfineon Technologies BSZ021N04LS6ATMA1
SubcategoryMOSFETs
DescriptionMOSFET TRENCH <= 40V
Unit Weight0.001298 oz
USHTS8541290095
Part # AliasesBSZ021N04LS6 SP001477562
Pd - Power Dissipation83 W
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time1.6 ns
Moisture Sensitivity Level1 (Unlimited)