参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min16 s
Vgs th - Gate-Source Threshold Voltage2.1 V
TechnologySi
KRHTS8541299000
Minimum Operating Temperature- 55 C
Transistor PolarityN-Channel
Id - Continuous Drain Current40 A
JPHTS8541290100
Vgs - Gate-Source Voltage- 20 V, + 20 V
CAHTS8541290000
Length3.3 mm
ImageInfineon Technologies BSZ100N06NSATMA1
Height1.1 mm
Typical Turn-On Delay Time6 ns
Rds On - Drain-Source Resistance8.5 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time10 ns
Product CategoryMOSFET
DescriptionMOSFET TRENCH 40<-<100V
Package / CaseTSDSON-8
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
Factory Pack Quantity5000
Width3.3 mm
Mounting StyleSMD/SMT
RoHS Details
TARIC8541290000
BrandInfineon Technologies
Qg - Gate Charge15 nC
MXHTS85412999
ManufacturerInfineon
SeriesOptiMOS 5
Product TypeMOSFET
SubcategoryMOSFETs
USHTS8541290075
Channel ModeEnhancement
Unit Weight0.005503 oz
CNHTS8541290000
Part # AliasesBSZ100N06NS SP001067006
Pd - Power Dissipation36 W
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)