参数项参数值
参数项参数值
Forward Transconductance - Min62 S
TechnologySi
Id - Continuous Drain Current13 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1.8 V
Rds On - Drain-Source Resistance10.5 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time11 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8.7 ns
Minimum Operating Temperature- 55 C
CAHTS8541290000
Width3.9 mm
Height1.75 mm
MXHTS85412999
Maximum Operating Temperature+ 150 C
KRHTS8541299000
Qg - Gate Charge9.5 nC
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
DescriptionMOSFET MOSFT 30V 13A 10mOhm 9.5nC
Package / CaseSO-8
Channel ModeEnhancement
Mounting StyleSMD/SMT
JPHTS8541290100
CNHTS8541290000
Fall Time3.8 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon / IR IRF7413ZTRPBF
Unit Weight0.017870 oz
TARIC8541290000
RoHS Details
Product TypeMOSFET
Factory Pack Quantity4000
Pd - Power Dissipation2.5 W
BrandInfineon / IR
Vds - Drain-Source Breakdown Voltage30 V
USHTS8541290095
Number of Channels1 Channel
Rise Time6.3 ns
Moisture Sensitivity Level1 (Unlimited)