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UMT2907AT106
厂牌：ROHM Semiconductor
包装：REEL 1
类目：元器件 > 分立器件 > 双极晶体管
编号：B000040823271
描述：
Trans GP BJT PNP 60V 0.6A 200mW 3-Pin UMT T/R
商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 60 V
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max- 60 V
Continuous Collector Current- 0.6 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Width1.25 mm
Collector-Emitter Saturation Voltage- 1.6 V
Height0.8 mm
DC Collector/Base Gain hfe Min50
Length2 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541290000
RoHS Details
ImageROHM Semiconductor UMT2907AT106
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryTransistors
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
SeriesUMT2907A
Product CategoryBipolar Transistors - BJT
Unit Weight0.000176 oz
USHTS8541290095
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT PNP 60V 0.6A
Part # AliasesUMT2907A
Pd - Power Dissipation200 mW
Moisture Sensitivity Level1 (Unlimited)