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US6M2TR
厂牌：ROHM Semiconductor
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000040823302
描述：MOSFET N+P 20V 1.5A/1A TUMT6
商品参数
参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage700 mV, 500 mV
TechnologySi
Id - Continuous Drain Current1 A, 1.5 A
Transistor PolarityN-Channel, P-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time7 ns, 9 ns
Rds On - Drain-Source Resistance240 mOhms, 390 mOhms
Typical Turn-Off Delay Time15 ns, 25 ns
Width1.7 mm
MXHTS85412999
Length2 mm
KRHTS8541299000
Qg - Gate Charge1.6 nC, 2.1 nC
CNHTS8541290000
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Fall Time6 ns, 10 ns
TARIC8541290000
RoHS Details
SeriesUS6M2
ImageROHM Semiconductor US6M2TR
BrandROHM Semiconductor
Unit Weight0.000265 oz
Product TypeMOSFET
Factory Pack Quantity3000
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Pd - Power Dissipation1 W
Part # AliasesUS6M2
DescriptionMOSFET N+P 20V 1.5A/1A
USHTS8541290095
Vds - Drain-Source Breakdown Voltage20 V, 30 V
Number of Channels2 Channel
Rise Time9 ns, 8 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)