RQ3G100GNTB

厂牌：ROHM Semiconductor

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000040823339

描述：MOSFET N-CH 40V 10A HSMT-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:2W; Transistor Case Style:HSMT; No. of Pins:8Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018)

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商品参数

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1.2 V

TechnologySi

Id - Continuous Drain Current10 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time8 ns

Rds On - Drain-Source Resistance11 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time23.1 ns

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge8.4 nC

JPHTS8541290100

CAHTS8541290000

Package / CaseHSMT-8

Mounting StyleSMD/SMT

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

CNHTS8541290000

TARIC8541290000

PackagingReel

PackagingCut Tape

PackagingMouseReel

ImageROHM Semiconductor RQ3G100GNTB

RoHS Details

Channel ModeEnhancement

SubcategoryMOSFETs

Fall Time3.2 ns

BrandROHM Semiconductor

Factory Pack Quantity3000

Unit Weight0.196723 oz

Product CategoryMOSFET

Product TypeMOSFET

ManufacturerROHM Semiconductor

DescriptionMOSFET Nch 40V 10A Power MOSFET

USHTS8541290095

Pd - Power Dissipation2 W

Part # AliasesRQ3G100GN

Vds - Drain-Source Breakdown Voltage40 V

Number of Channels1 Channel

Rise Time4.2 ns

Moisture Sensitivity Level1 (Unlimited)