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RQ1E070RPTR
厂牌：ROHM Semiconductor
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000040823702
描述：MOS场效应管 RQ1E070RPTR TSMT8
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min6 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time16 ns
Rds On - Drain-Source Resistance12 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time140 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge50 nC
Package / CaseTSMT-8
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541210000
Fall Time70 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor RQ1E070RPTR
TARIC8541290000
RoHS Details
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation1.5 W
Part # AliasesRQ1E070RP
BrandROHM Semiconductor
SubcategoryMOSFETs
Product CategoryMOSFET
ManufacturerROHM Semiconductor
Vds - Drain-Source Breakdown Voltage30 V
USHTS8541290095
Number of Channels1 Channel
Rise Time35 ns
Moisture Sensitivity Level1 (Unlimited)