参数项参数值
参数项参数值
DC Current Gain hFE Max390
Gain Bandwidth Product fT280 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current2.5 A
Collector- Emitter Voltage VCEO Max80 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage100 mV
DC Collector/Base Gain hfe Min120
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-346T-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor 2SCR544RTL
TARIC8541290000
RoHS Details
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation500 mW
Part # Aliases2SCR544R
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT NPN Digital Transtr Driver
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)