参数项参数值
参数项参数值
DC Current Gain hFE Max600
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current- 500 mA
ConfigurationDual
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO5 V
Width1.6 mm
MXHTS85412999
DC Collector/Base Gain hfe Min100
Height1.1 mm
Length2.9 mm
KRHTS8541219000
CNHTS8541210000
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageROHM Semiconductor IMD10AT108
SeriesIMD10A
BrandROHM Semiconductor
Unit Weight0.010337 oz
Product TypeBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity3000
Product CategoryBipolar Transistors - Pre-Biased
ManufacturerROHM Semiconductor
SubcategoryTransistors
Pd - Power Dissipation300 mW
Part # AliasesIMD10A
DescriptionBipolar Transistors - Pre-Biased NPN/PNP 50V 500MA SOT-457
USHTS8541210075
Typical Resistor Ratio0.01
Typical Input Resistor10 kOhms
Number of Channels2 Channel
Moisture Sensitivity Level1 (Unlimited)