参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Id - Continuous Drain Current10 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time16 ns
Rds On - Drain-Source Resistance15.6 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time110 ns
Qg - Gate Charge23.5 nC
Package / CaseHUML2020L-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time86 ns
PackagingCut Tape
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RF4C100BCTCR
Product CategoryMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
Product TypeMOSFET
ManufacturerROHM Semiconductor
Pd - Power Dissipation2 W
Part # AliasesRF4C100BC
DescriptionMOSFET -20V P-CHANNEL -10A
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time43 ns