参数项参数值
参数项参数值
TechnologySi
ConfigurationDual
Id - Continuous Drain Current1.5 A
Transistor PolarityN-Channel
Rds On - Drain-Source Resistance240 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time15 ns
Width1.7 mm
Vgs - Gate-Source Voltage- 12 V, + 12 V
MXHTS85412999
Typical Turn-On Delay Time7 ns
Length2 mm
KRHTS8541299000
ImageROHM Semiconductor US6K1TR
CNHTS8541290000
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
JPHTS8541290100
RoHS Details
SeriesUS6K1
Fall Time6 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
BrandROHM Semiconductor
Unit Weight0.000265 oz
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
Product TypeMOSFET
ManufacturerROHM Semiconductor
Pd - Power Dissipation1 W
Part # AliasesUS6K1
TypeMOSFET
DescriptionMOSFET 2N-CH 30V 1.5A
USHTS8541290095
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time9 ns
Moisture Sensitivity Level1 (Unlimited)