参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Id - Continuous Drain Current1.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time7 ns
Rds On - Drain-Source Resistance240 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time15 ns
Width1.7 mm
MXHTS85412999
Length2 mm
KRHTS8541299000
CNHTS8541290000
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Fall Time6 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
SeriesUS6K1
BrandROHM Semiconductor
ImageROHM Semiconductor US6K1TR
Unit Weight0.000265 oz
SubcategoryMOSFETs
Factory Pack Quantity3000
Product CategoryMOSFET
Product TypeMOSFET
ManufacturerROHM Semiconductor
Pd - Power Dissipation1 W
Part # AliasesUS6K1
DescriptionMOSFET 2N-CH 30V 1.5A
USHTS8541290095
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time9 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)