参数项参数值
参数项参数值
Forward Transconductance - Min5 s
ConfigurationSingle
Id - Continuous Drain Current3 A
Transistor PolarityP-Channel
TechnologySi
Width1.7 mm
Rds On - Drain-Source Resistance28 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time210 ns
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time9 ns
Length2 mm
MXHTS85412999
RoHS Details
ImageROHM Semiconductor RZF030P01TL
KRHTS8541299000
Mounting StyleSMD/SMT
Product TypeMOSFET
Qg - Gate Charge18 nC
USHTS8541290095
Package / CaseSOT-323-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
CNHTS8541210000
Channel ModeEnhancement
ProductMOSFET Small Signal
ManufacturerROHM Semiconductor
SeriesRZF030P01
SubcategoryMOSFETs
Factory Pack Quantity3000
Product CategoryMOSFET
Fall Time120 ns
Unit Weight0.116968 oz
BrandROHM Semiconductor
DescriptionMOSFET Med Pwr, Sw MOSFET P Chan, -12V, 1.5A
Pd - Power Dissipation800 mW
Part # AliasesRZF030P01
Vds - Drain-Source Breakdown Voltage12 V
Number of Channels1 Channel
Rise Time40 ns
Moisture Sensitivity Level1 (Unlimited)