参数项参数值
参数项参数值
DC Current Gain hFE Max600
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO- 50 V, 50 V
Collector- Emitter Voltage VCEO Max- 50 V, 50 V
Continuous Collector Current- 100 mA, 100 mA
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO- 5 V, 5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 300 V, 300 V
DC Collector/Base Gain hfe Min100
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor UMD6NFHATR
TARIC8541210000
RoHS Details
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
BrandROHM Semiconductor
DescriptionBipolar Transistors - BJT PNP+NPN DIGITAL TRANS
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation150 mW
SubcategoryTransistors
USHTS8541210075