参数项参数值
参数项参数值
Forward Transconductance - Min1.4 S
ConfigurationDual
TechnologySi
Id - Continuous Drain Current1.3 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time8 ns
Rds On - Drain-Source Resistance190 mOhms
Transistor Type2 P-Channel
Typical Turn-Off Delay Time30 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge2.4 nC
CNHTS8541290000
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Fall Time9 ns
TARIC8541290000
RoHS Details
ImageROHM Semiconductor US6J11TR
SeriesUS6J11
BrandROHM Semiconductor
Unit Weight0.000265 oz
Product TypeMOSFET
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product CategoryMOSFET
SubcategoryMOSFETs
Pd - Power Dissipation1 W
Part # AliasesUS6J11
DescriptionMOSFET TRANS MOSFET PCH 12V 1.3A 6PIN
USHTS8541290095
Vds - Drain-Source Breakdown Voltage12 V
Number of Channels2 Channel
Rise Time10 ns
Moisture Sensitivity Level1 (Unlimited)