参数项参数值
参数项参数值
Forward Transconductance - Min3.1 S, 4.1 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage500 mV, 1.5 V
TechnologySi
Id - Continuous Drain Current5.5 A, 5 A
Transistor PolarityN-Channel, P-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time7.8 ns, 9 ns
MXHTS85412999
Rds On - Drain-Source Resistance30 mOhms, 42 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time24 ns, 50 ns
KRHTS8541299000
Qg - Gate Charge4 nC, 6.5 nC
CNHTS8541290000
Package / CaseHUML2020L-8
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
Channel ModeEnhancement
Fall Time5.5 ns, 30 ns
TARIC8541290000
ImageROHM Semiconductor UT6MA3TCR
RoHS Details
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
BrandROHM Semiconductor
Product TypeMOSFET
Product CategoryMOSFET
DescriptionMOSFET 20V Nch+Pch Si MOSFET
SubcategoryMOSFETs
Pd - Power Dissipation2 W
Part # AliasesUT6MA3
USHTS8541290095
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time5.9 ns, 36 ns
Moisture Sensitivity Level1 (Unlimited)