参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT180 Mhz
Collector- Base Voltage VCBO60 V
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current150 mA
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage400 mV
DC Collector/Base Gain hfe Min120
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor UMX1NFHATN
TARIC8541210000
RoHS Details
Factory Pack Quantity3000
Unit Weight0.001410 oz
ManufacturerROHM Semiconductor
BrandROHM Semiconductor
DescriptionBipolar Transistors - BJT TRANS DIGITAL NPN+NPN
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation150 mW
SubcategoryTransistors
Part # AliasesUMX1NFHA
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)