参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current200 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8 ns
Width0.8 mm
Height0.5 mm
Rds On - Drain-Source Resistance1.4 Ohms
Transistor Type1 P-Channel MOSFET
Typical Turn-Off Delay Time30 ns
MXHTS85412999
Length1.2 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge-
Mounting StyleSMD/SMT
Package / CaseSOT-723-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ProductMOSFET Small Signal
CNHTS8541210000
ImageROHM Semiconductor RSM002P03T2L
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity8000
Fall Time40 ns
SeriesRSM002P03
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET P-CH 30V 200MA
Unit Weight0.000282 oz
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Product TypeMOSFET
USHTS8541290095
Part # AliasesRSM002P03
Pd - Power Dissipation150 mW
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time5 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)