参数项参数值
参数项参数值
Forward Transconductance - Min1.5 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current1.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance350 mOhms
Transistor Type1 P-Channel
Qg - Gate Charge32 nC
Package / CaseSOT-457-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time10 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
Unit Weight0.197534 oz
ImageROHM Semiconductor RQ6P015SPTR
BrandROHM Semiconductor
Pd - Power Dissipation1.25 W
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Part # AliasesRQ6P015SP
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET Pch -100V -1.5A Power MOSFET
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time15 ns
Moisture Sensitivity Level1 (Unlimited)