参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current2.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance55 mOhms
Transistor Type1 P-Channel
MXHTS85412999
Qg - Gate Charge5.2 nC
KRHTS8541299000
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541290000
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.000265 oz
ImageROHM Semiconductor RRL025P03TR
BrandROHM Semiconductor
Pd - Power Dissipation1 W
Factory Pack Quantity3000
Product TypeMOSFET
Part # AliasesRRL025P03
ManufacturerROHM Semiconductor
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET Med Pwr, Sw MOSFET P Chan, -30V, -2.5A
Vds - Drain-Source Breakdown Voltage30 V
USHTS8541290095
Number of Channels1 Channel