参数项参数值
参数项参数值
Forward Transconductance - Min6.5 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current7.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance16.7 mOhms
Transistor Type1 P-Channel
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge22 nC
Package / CaseHUML2020L-8
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541290000
RoHS Details
ImageROHM Semiconductor RF4E075ATTCR
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time35 ns
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
SeriesRF4E075AT
Factory Pack Quantity3000
Product CategoryMOSFET
Product TypeMOSFET
USHTS8541290095
DescriptionMOSFET Pch -30V -7.5A Middle Power MOSFET
Pd - Power Dissipation2 W
Part # AliasesRF4E075AT
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time18 ns
Moisture Sensitivity Level1 (Unlimited)