参数项参数值
参数项参数值
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 60 V
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max- 60 V
Continuous Collector Current- 0.6 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage- 1.6 V
DC Collector/Base Gain hfe Min75
Width1.3 mm
Height0.94 mm
Length2.9 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
RoHS Details
Unit Weight0.001058 oz
BrandON Semiconductor
SeriesMMBT2907AL
ImageON Semiconductor MMBT2907ALT3G
Pd - Power Dissipation225 mW
Product CategoryBipolar Transistors - BJT
ManufacturerON Semiconductor
SubcategoryTransistors
Factory Pack Quantity10000
Product TypeBJTs - Bipolar Transistors
USHTS8541210095
DescriptionBipolar Transistors - BJT 600mA 60V PNP
Moisture Sensitivity Level1 (Unlimited)