参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 4 V
TechnologySi
Id - Continuous Drain Current11 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance175 mOhms
Transistor Type1 P-Channel
Width6.22 mm
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge19 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon Technologies IRFR9024NTRPBF
TARIC8541290000
RoHS Details
Unit Weight0.139332 oz
Factory Pack Quantity2000
Product TypeMOSFET
Pd - Power Dissipation38 W
BrandInfineon Technologies
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
DescriptionMOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC
Vds - Drain-Source Breakdown Voltage55 V
TradenameStrongIRFET
USHTS8541290095
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)