参数项参数值
参数项参数值
Forward Transconductance - Min38 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage5 V
TechnologySi
Id - Continuous Drain Current10 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9.4 ns
Rds On - Drain-Source Resistance31 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time14 ns
Width5 mm
Height0.83 mm
Length6 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge36 nC
Package / CasePQFN-8
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time3.4 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon / IR IRFH5015TRPBF
TARIC8541290000
RoHS Details
Factory Pack Quantity4000
Product TypeMOSFET
Pd - Power Dissipation3.6 W
BrandInfineon / IR
SubcategoryMOSFETs
Product CategoryMOSFET
ManufacturerInfineon
DescriptionMOSFET 150V SINGLE N-CH 31mOhms 33nC
Vds - Drain-Source Breakdown Voltage150 V
USHTS8541290095
Number of Channels1 Channel
Rise Time9.7 ns
Moisture Sensitivity Level1 (Unlimited)