参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current33 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time35 ns
Rds On - Drain-Source Resistance94 mOhms
Transistor Type1 N-Channel
Width9.65 mm
Height4.83 mm
Length10.67 mm
MXHTS85412999
Qg - Gate Charge48 nC
KRHTS8541299000
Package / CaseTO-263-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CNHTS8541210000
CAHTS8541290000
Channel ModeEnhancement
Fall Time120 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
BrandON Semiconductor / Fairchild
Unit Weight0.046296 oz
RoHS Details
SeriesFDB33N25
Factory Pack Quantity800
ImageON Semiconductor / Fairchild FDB33N25TM
Pd - Power Dissipation235 W
Product CategoryMOSFET
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage250 V
DescriptionMOSFET 250V N-CH MOSFET
Number of Channels1 Channel
Rise Time230 ns
Moisture Sensitivity Level1 (Unlimited)