参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min2.4 S
TechnologySi
Vgs th - Gate-Source Threshold Voltage3 V
Transistor PolarityN-Channel
Id - Continuous Drain Current2.5 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 20 V, + 20 V
JPHTS8541290100
Height2.4 mm
CAHTS8541290000
Length6.6 mm
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time15 ns
Product CategoryMOSFET
ImageSTMicroelectronics STD3NK100Z
Rds On - Drain-Source Resistance6 Ohms
Transistor Type1 N-Channel Power MOSFET
Typical Turn-Off Delay Time39 ns
Maximum Operating Temperature+ 150 C
Package / CaseTO-252-3
PackagingCut Tape
PackagingMouseReel
PackagingReel
DescriptionMOSFET Hi Vltg NPN Zener SuperMESH
Width6.2 mm
Mounting StyleSMD/SMT
TARIC8541210000
ManufacturerSTMicroelectronics
BrandSTMicroelectronics
Product TypeMOSFET
Qg - Gate Charge18 nC
Factory Pack Quantity2500
MXHTS85412101
RoHS Details
SubcategoryMOSFETs
SeriesSTD3NK100Z
USHTS8541290095
Channel ModeEnhancement
Fall Time32 ns
Unit Weight0.139332 oz
CNHTS8541210000
Pd - Power Dissipation90 W
TradenameSuperMESH
Vds - Drain-Source Breakdown Voltage1 kV
Number of Channels1 Channel
Rise Time7.5 ns
Moisture Sensitivity Level1 (Unlimited)