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商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min0.32 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current500 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance1.2 Ohms
Transistor Type1 N-Channel
Height5.33 mm
Width4.19 mm
Length5.2 mm
MXHTS85412101
KRHTS8541219000
Package / CaseTO-92-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
ProductMOSFET Small Signal
PackagingBulk
TARIC8541210000
Unit Weight0.007055 oz
Pd - Power Dissipation830 mW
SeriesBS170
BrandON Semiconductor / Fairchild
Part # AliasesBS170_NL
ManufacturerON Semiconductor
Product TypeMOSFET
Factory Pack Quantity10000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage60 V
Product CategoryMOSFET
USHTS8541210095
Number of Channels1 Channel
DescriptionMOSFET N-CHANNEL MOSFET
TypeFET
Moisture Sensitivity LevelNot Applicable