参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 2.1 V
TechnologySi
Id - Continuous Drain Current- 14.4 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time3.2 ns
Rds On - Drain-Source Resistance997 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time119 ns
Qg - Gate Charge10 nC
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time68 ns
Unit Weight0.000296 oz
TARIC8541290000
RoHS Details
Pd - Power Dissipation1.25 W
Factory Pack Quantity3000
BrandPanjit
ManufacturerPanjit
Vds - Drain-Source Breakdown Voltage- 30 V
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
Number of Channels1 Channel
Rise Time33 ns
DescriptionMOSFET /A05/TR/7"/HF/3K/SOT-23/MOS/SOT/NFET-30TMP/NF30T-QI24/PJ///
USHTS8541210095