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商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage5 V
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time40 ns
Rds On - Drain-Source Resistance104 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time100 ns
CNHTS8541290000
Qg - Gate Charge100 nC
Package / CaseTO-247-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time35 ns
PackagingTube
TARIC8541290000
SeriesBM14270MUV-LB
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor R6042JNZ4C13
Product CategoryMOSFET
Factory Pack Quantity30
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation495 W
USHTS8541290095
DescriptionMOSFET 600V N-CH 42A POWER
Vds - Drain-Source Breakdown Voltage600 V
TradenamePrestoMOS
Number of Channels1 Channel
Rise Time30 ns
Moisture Sensitivity Level1 (Unlimited)