参数项参数值
参数项参数值
Forward Transconductance - Min3 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Id - Continuous Drain Current2.2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time5 ns
Rds On - Drain-Source Resistance155 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time13 ns
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge5.1 nC
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
RoHS Details
Channel ModeEnhancement
SeriesNVR5198NL
Factory Pack Quantity3000
SubcategoryMOSFETs
Product CategoryMOSFET
BrandON Semiconductor
Unit Weight0.000282 oz
Product TypeMOSFET
DescriptionMOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH
ManufacturerON Semiconductor
USHTS8541290095
Pd - Power Dissipation1.5 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time7 ns
Moisture Sensitivity Level1 (Unlimited)