参数项参数值
参数项参数值
Forward Transconductance - Min3 S
ConfigurationSingle
Id - Continuous Drain Current2.2 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Rds On - Drain-Source Resistance155 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time13 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time5 ns
Package / CaseSOT-23-3
MXHTS85412999
Minimum Operating Temperature- 55 C
TARIC8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Qg - Gate Charge5.1 nC
Maximum Operating Temperature+ 150 C
RoHS Details
Channel ModeEnhancement
CNHTS8541290000
Product CategoryMOSFET
BrandON Semiconductor
Unit Weight0.000282 oz
Product TypeMOSFET
SeriesNVR5198NL
Factory Pack Quantity3000
DescriptionMOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH
ManufacturerON Semiconductor
SubcategoryMOSFETs
USHTS8541290095
Pd - Power Dissipation1.5 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time7 ns
Moisture Sensitivity Level1 (Unlimited)