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SI2323DDS-T1-GE3
厂牌：Vishay
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000041093789
描述：Trans MOSFET P-CH 20V 4.1A 3-Pin SOT-23 T/RMOSFET -20V Vds 8V Vgs SOT-23
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min18 S
Vgs th - Gate-Source Threshold Voltage400 mV
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current5.3 A
Vgs - Gate-Source Voltage- 8 V, + 8 V
KRHTS8541299000
Minimum Operating Temperature- 55 C
Length2.9 mm
Height1.45 mm
JPHTS8541290100
Typical Turn-On Delay Time24 ns
CAHTS8541290000
Rds On - Drain-Source Resistance39 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time52 ns
RoHS Details
Package / CaseSOT-23-3
ImageVishay Semiconductors SI2323DDS-T1-GE3
Factory Pack Quantity3000
PackagingReel
PackagingCut Tape
PackagingMouseReel
Maximum Operating Temperature+ 150 C
Width1.6 mm
TARIC8541290000
BrandVishay Semiconductors
SubcategoryMOSFETs
Mounting StyleSMD/SMT
Product CategoryMOSFET
ManufacturerVishay
DescriptionMOSFET -20V Vds 8V Vgs SOT-23
Qg - Gate Charge24 nC
MXHTS85412999
SeriesSI2
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.000282 oz
Fall Time11 ns
CNHTS8541290000
Pd - Power Dissipation1.7 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time22 ns
Moisture Sensitivity Level1 (Unlimited)