参数项参数值
参数项参数值
Gain Bandwidth Product fT85 MHz
ConfigurationSingle
Collector- Base Voltage VCBO5 V
Maximum DC Collector Current8 A
Collector- Emitter Voltage VCEO Max80 V
MXHTS85412999
Continuous Collector Current8 A
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO5 V
KRHTS8541299000
Collector-Emitter Saturation Voltage1 V
DC Collector/Base Gain hfe Min60
Mounting StyleSMD/SMT
Width6.22 mm
Length6.73 mm
Minimum Operating Temperature- 55 C
Height2.38 mm
JPHTS8541290100
Package / CaseTO-252-3
CNHTS8541290000
CAHTS8541290000
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageON Semiconductor MJD44H11RLG
Factory Pack Quantity1800
Product CategoryBipolar Transistors - BJT
BrandON Semiconductor
TARIC8541290000
SeriesMJD44H11
RoHS Details
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 8A 80V 20W NPN
SubcategoryTransistors
ManufacturerON Semiconductor
USHTS8541290075
Unit Weight0.035274 oz
Pd - Power Dissipation20 W
Moisture Sensitivity Level1 (Unlimited)