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SI2308BDS-T1-E3
厂牌：VISHAY
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000041186419
描述：MOSFET N-CH 60V 2.3A SOT23-3
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min5 s
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current2.3 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541219000
Minimum Operating Temperature- 55 C
JPHTS8541210101
Typical Turn-On Delay Time4 ns
CAHTS8541210000
Rds On - Drain-Source Resistance156 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time10 ns
Package / CaseSOT-23-3
RoHS Details
ImageVishay Semiconductors SI2308BDS-T1-E3
Factory Pack Quantity3000
PackagingCut Tape
PackagingReel
PackagingMouseReel
Maximum Operating Temperature+ 150 C
TARIC8541290000
BrandVishay Semiconductors
SubcategoryMOSFETs
Mounting StyleSMD/SMT
Product CategoryMOSFET
ManufacturerVishay
DescriptionMOSFET 60V Vds 20V Vgs SOT-23
Qg - Gate Charge6.8 nC
MXHTS85412101
SeriesSI2
Product TypeMOSFET
USHTS8541210095
Channel ModeEnhancement
Unit Weight0.000282 oz
Fall Time7 ns
CNHTS8541290000
Part # AliasesSI2308BDS-E3
Pd - Power Dissipation1.66 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time10 ns
Moisture Sensitivity Level1 (Unlimited)